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| SHINDENGEN Darlington Transistor 2SD2196 (TP15L20) 15A NPN OUTLINE DIMENSIONS Case : ITO-3P Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Dielectric Strength Mounting Torque Symbol Tstg Tj V CBO V CEO V EBO IC ICP IB IBP PT Vdis TOR Conditions Tc = 25 Terminals to case AC 1 minute (Recommended torque : 0.5Nm Ratings -55+150 +150 200 200 7 15 22 1 2 65 2 0.8 Ratings Max 0.1 Max 0.1 Max 5 Min 1,500 Max 30,000 Max 1.5 Max 2.0 Max 1.92 TYP 20 Max 2 Max 12 Max 5 Unit V V V A A A A W kV Nm Unit mA mA Electrical Characteristics (Tc=25) Item Symbol ICBO Collector Cutoff Current ICEO IEBO Emitter Cutoff Current hFE DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Thermal Resistance Transition Frequency Turn on Time Storage Time Fall Time Conditions VCB = 200V VCE = 200V VEB = 7V VCE = 3V, IC = 10A IC = 10A IB = 30mA Junction to case VCE = 10V, IC = 1.5A IC = 10A IB1 = IB2 = 30mA RL = 3 VBB2 = 4V V CE(sat) V BE(sat) jc fT ton ts tf V V /W MHz s Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SD2196 hFE - I C VCE = 3V 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 0C 25C -25C -55C 1 10 22 100 0.1 Collector Current IC [A] 2SD2196 Saturation Voltage 3 5A 7.5A 10A 15A 22A 2.5 22A 10A 15A 2 3 IC = 0.5A 1.5A 2.5 2 7.5A 5A 1.5 IC = 0.5A 1.5A 1.5 Collector-Emitter Voltage VCE [V] 0.5 0.5 Tc = 25C 1 10 100 0 1000 2000 0 0.1 Base Current IB [mA] Base-Emitter Voltage VBE [V] 1 1 2SD2196 Switching Time - IC 10 ts Switching Time tSW [s] tf 1 ton IB1 = 0.333IC IB2 = 0.333IC VBB2 = 4V VCC = 50V Tc = 25C 0.1 0 5 10 15 20 Collector Current IC [A] 2SD2196 Switching Time 10 ts Switching Time tSW [s] tf 1 ton IC = 10A IB1 = 0.033A IB2 = 0.033A VBB2 = 4V Tc = 25C R L = 3 0.1 0 50 100 150 200 Collector Voltage VCC [V] 2SD2196 Switching Time - Tc ts 10 Switching Time tSW [s] tf 1 ton IC = 10A IB1 = 0.033A IB2 = 0.033A VBB2 = 4V R L = 5 0.1 0 50 100 150 Case Temperature Tc [C] 2SD2196 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-5 10-3 10-4 10-2 10-1 100 101 102 Time t [s] 2SD2196 20 10ms Forward Bias SOA 1ms 150s 10 DC PT limit Collector Current IC [A] 1 IS/B limit 0.1 Tc = 25C Single Pulse 0.01 1 10 100 200 Collector-Emitter Voltage VCE [V] 2SD2196 100 Collector Current Derating Collector Current Derating [%] 80 60 IS/B limit 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SD2196 24 Reverse Bias SOA 20 16 Collector Current IC [A] 12 8 4 IB1 = 0.002IC IB2 = 0.03A VBB2 = 5V Tc = 25C 0 50 100 150 200 0 Collector-Emitter Voltage VCE [V] |
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